Frequency adjustment plating control



s. A. HlRsH 2,906,235 FREQUENCY ADJUSTMENT PLATING CONTROL 2 Sheets-Sheet l H .f L.

Sept. 29, 1959 Filed March 22, 1957 Sept. 29, 1959 s. A. HlRsH 2,906,235

FREQUENCY ADJUSTMENT PLATING CONTROL Filed March 22, 1957 2 Sheets-Sheet 2 un J n a V W w h w Ih M W M H TH K I M/ H m w 0 W U M H... I y .A n n vh mw, Tl i A W Wh N m n Nh. hm.. m QU an Y .smh 1 MMI B Nm. ..55 omhzou 2oz, N .=m \w maam I l Il... l IH l I l I I I I l||.|||w|||| I I I I Il H uw l- NNI United States Patent O FREQUENCY ADJUSTMENT PLATING CONTROL Stanley A. Hirsh, Valley Stream, N.Y., assignor to Bulova Research and Development Laboratories, Inc., Woodside, N.Y., a corporation of New York Application March 22, 1957, Serial No. 647,784

8 Claims. (Cl. 118-8) The present invention relates generally to the manufacture of frequency control devices, and more particularly to apparatus for automatically plating a piezoelectric crystal so as to adjust its resonance frequency to a predetermined value.

Piezoelectric crystals are widely used as resonators, electrical filters and in other frequency control systems. In the manufacture of such elements, one of the critical processes involves the vacuum evaporation of a metallic layer onto one or both faces of the crystal wafer so as mechanically to load it, thereby reducing the crystal frequency to an assigned value. Since the crystals when manufactured in large scale production exhibit a considerable variation in frequency, the final plating adjustment must be made carefully on an individual basis before the crystal is permanently sealed in its casing. Some frequency shift is encountered during sealing and in aging, apart from the excursion which results from a non-zero temperature coefficient. Consequently at this stage the nominal frequency must be approached with considerable precision.

The customary practice in the quartz crystal manufacturing industry, in the final plating operation, is to compare the frequency of the element being processed to that of a standard element and to read the difference on a frequency meter. The evaporation of the metal in vacuo on the crystal face is governed manually by an operator. This is effected by intermittent evaporation under operator control until the frequency value, as indicated by the meter, is reduced to the proper point.

The ability to reach this point Without overshooting depends on the adroitness and care exercised by the operator and entails delicate control operations when the critical point is approached. Upon attaining the proper point, the element plated has a frequency corresponding to that of the standard and the process is completed.

In an operator-controlled process it is necessary for the operator to control the length of time the plating button is depressed in order to control the frequency difference between the plated crystal and the standardized element. lt is also essential for the operator to adjust the time interval between adjacent pulses of metal vapor so as to allow the crystal temperature to stabilize and thereby prevent frequency overshoot. Moreover, since the frequency difference is indicated on a meter, the operator is called upon to change scales in the course of plating to maintain optimum meter accuracy.

From the foregoing, it is apparent that the manuallycontrolled process involves a considerable measure of skill and judgment on the part of the operator. Great care must be exercised and the productivity of the operator cannot be increased without sacrificing the quality of the product.

In View of the foregoing, it is the principal object of the invention to eliminate the need for manual skills and to provide an automatic plating process which adjusts the yfrequency of a crystal resonator with a .high order of precision by the vacuum evaporation of a metallic loading substance onto the face of the crystal. While the invention is described herein in connection with crystal resonators, it is to be understood that the invention is equally applicable to other forms of resonators, such as tuning forks and magnetostrictive rods whose operating frequency may be adjusted by plating to an assigned value.

More particularly, it is an object of the invention to provide an automatic plating apparatus which is adapted to evaporate metal from a hot filament while the crystal is being oscillated, and which acts to control the rate of evaporation from the filament and the amount of metal reaching the crystal as a function of the difference between the measured frequency of the crystal and a reference standard.

Among the significant features of the invention are a continuous correction of the crystal temperature, whereby minimum time is lost in Waiting, and an automatic shut-off of the system when the desired frequency is reached. The invention obviates the need to read or change meter scales in the course of plating.

Also, an object of the invention is to provide plating apparatus which operates at high speed to produce frequency-adjusted crystals which .are uniformly of high accuracy.

Another difficulty experienced in crystal plating is the unavoidable heating of the crystal due to radiation from the evaporation filament. This causes the crystal to operate at a difference value from that it would have under ambient temperature conditions and so causes a drift after shut-off. Accordingly, it is another object of the invention to minimize the error arising from heating of the crystal in the course of plating.

Briefly stated, in a plating apparatus according to the invention, the rate of evaporation and the amount of metal arriving at the crystal are controlled by the difference between the frequency of the crystal being plated and a reference frequency. The temperature of the evaporation filament is controlled by a circuit responsive to the difference frequency. In addition, a shutter interposed between the filament and the crystal being plated is oscillated intermittently to block the flow of evaporated metal molecules when the difference frequency falls below a predetermined value. As the difference frequency is further decreased the shutter cycle is altered whereby the exposure of the crystal to the liow of evaporated metal is lessened. When the frequency difference reaches zero or a predetermined value relative to the standard, the shutter operation is arrested and the lament is shut off.

For a better understanding of the invention as Well as other objects and further features thereof, reference is had to the following detailed description to be read in connection with the accompanying drawings, wherein like components in the figures are identified by like reference numerals.

In the drawings:

Fig. l is a block diagram of an automatic plating system in accordance with the invention.

Fig. 2 is a schematic circuit diagram of the system.

Referring now to the drawings, and more particularly to Fig. l, the crystal 10 to be plated is inserted in a suitable vacuum chamber, represented by circle 11, in which is mounted an evaporation heater 12 in the form of a tungsten filament. A charge of metal, such as a gold staple, is placed on the filament, the metal being vaporized and condensing` on the surface of the crystal to be plated. The metal layer acts mechanically to load the crystal, thereby reducing its operating frequency.

The system disclosed in connection with Pig. 1 is designed automatically to control the plating process as a function of the operating frequency of the crystal unit whereby Aplating continued 'until-fa point is reached at which the crystal frequency iis at an assigned value determined with reference to afrequency standard.

'-Inte'rpcsed 'between 'the crystal f ann the wap ien filament Zin va'cnum -namber r1 is a shutter is ch is retraetable by means of an'eziternal 'solenoid 14, the `arrangement :bei'ng such l'that when the solenoid is 5deenergized, the shutter is yprojecten to block the v'diitusien path 'between 'the filament and V'the crystal. When the solenoid is energized, the shutter is withdrawn from the vapor path, permitting `the :flow of lrne'tail molecules to impi-nge on Vthe face of Athe crystal. A spring 15 acts to return the 'shutter -to its iblocking position iupon -deenergization of 'the-solenoid. y

Crystal 1li -is connected in Lan oscillator-enduit, 'represented by block r'16, which I"generatesfa wattage wave whos-2 frequency is dependent on the electro-mechanical transduction characteristic of the associated crystal. The frequency of lthe oscillator V16 1is progressively redt-leed in the 'course -of plating by l'rea'son fof the loading effect fo`f the :plated metal on crystal no. Y

Also 'provided iis fa reference osiilto'r, represented -b'y block 17, which includes va stabitizecrystl operating at the desired frequency. The respective Ioutputs '-of standard oscillator L17 fnd lpla'ting oscillator 16 are -applied :to a frequency coin/errer er 1titer .18 which yields additive and difference beat frequencycomponehts. The difference frequency derived from the mixer 18 fis fied to a frequency meter 119 'which A'preferablyis lrof 'the type Vdisclosed in the copending application of Hirsh for Direct Reading Frequency Meter, Ser. No. 640,361, filed February l5, 1957, and which .generates a square Wave control voltage of constant amplitudefand 'of 50 percent duty cycle, independent of the wave shape of the input voltage.

Thus the frequency of the voltage produced by the frequency meter is directly related to the difference frequency upon which the ultimate accuracy 4of the plated frequency resonator `will depend, and is independent of the wave shape 'or amplitude 'of the vdifference frequency voltage. The control voltage from the frequency meter is fed simultaneously to a filament temperature control circuit 20, a temperature stabilization fcontro'l 'circuit 21 and a shut-off control circuit '2/2. The manner in which the control voltage from the frequency meter acts upon the la'ment temperature control, stabilization and shutolf circuits is as follows:

Filament temperature control The filament temperature control circuit 20 serves to control the evaporation rate of'metal from the evaporation filament 12. It is necessary to reduce the evaporation filament temperature as the difference frequency reaches the shut-off point, or too much material will be 'deposited on the surface of lthe crystal 'and 'a .defective .product will be produced. vIt is likewise desirable to keep Attzhe evaporation rate high'so as to -reduce the 'processing Ime.

The filament temperature control 20 satisfies both c'onditions by continuously lowering the evaporation filament temperature as metal iis deposited by the filament power supply, the temperature being highest when the frequency difference in the applied control yoltage'is greatest. The filament temperature control 20 which responds vto the dierence voltage from frequency meter 19 acts to control the voltage supplied by 'theila'ni'en't l'poivver'simply 23 to .theev'aporation `ilainent -1-2.

Temperature'stabilization @emol The temperature stabilization control circuit Y21 .re-

sponds to the difference frequ'en'c'y'frm Athe frequency process nears completion. All quartz frequency resonators exhibit a frequency variation with temperature no matter how highly corrected. This variation in frequency under actual plating conditions is usually well in excess of the tolerance allowed for the finished product. It was heretofore necessary for a skilled operator to remove power from the evaporation 'filament so as to allow the crystal to cool ldown as the desired frequency was japproached and alternately to apply and remove power until the desired frequency was attained. y

This control causes the shutter 13'to remain fulIy open when the frequency difference between the crystal being adjusted and the "standard crystal is large, but as the shut-olic point is approached, the shutter is alternately opened and closed, thereby 'exposing the crystal surface to the radiant heat of the lament for an ever decreasing period until such time as the crystal being plated arrives at the desired frequency.

Shut-off control Shut-olf control `circuit 22 acts in response to the :beat frequency from the meter 19 to turn olf the power to the evaporation filament 12 fed thereto by the -lament supply V2% when lthe crystal reaches the `desired frequency. It also simultaneously interposes the shutter '13 'between the iilarnent and vthe crystal to .prevent any further plating.

Referring now to the schematic diagram shown in Fig. 2, the filament power supply, generallydesignated by numeral 2.3:, Vincludes a 'lament transformer 24 whose secondary is connected to the evaporation filament 12. The primary of the transformer 24 is connected through a variable reaction device Z5 to an auto-transformer 26 connected to the power line circuit 27. The voltage applied to the filament is controlledby the Variable reactance device 25, and this in turn is .governed by the filament temperature control circuit, generally designated by numeral 20.

interposed between the power line 27 :and the autotransformer Z6 is a 'relay-actuated shut-olf switch 28, the solenoid 29 of the relay being controlled by the shutolf control circuit, generally designated by numeral 22. The operation of the solenoid 14 for the `shutter 13 is controlled by the temperature stabilization `control circuit 21.

Let us -now consider `the structure and operation of the filament temperature control circuit 20. The square Wave difference frequency input lfrom the frequency meter l19 is applied to terminal 30 which is connected to a cathode-follower stage including .triode 3-1. The output of cathode-follower stage 31 is fed to a differentiating circuit selectively/including one of thecapacitors .32, the differentiated voltage is rectiiied .by diodes .33 yand the re'ctie'd pulses are integrated .by R-C network :34 to pro- 'ode 36. The balance :of tubes 35 Vand 36 is controlled by a potentiometer 37 common to ,the cathode circuits .of both tubes, whereby :in the absence of Yan input direct- .current voltage on .the grid of tube 35, equal fand `opposite anode currents are produced in the coils :3S and -39 'connected in the respective anodelcircuitspf theztubes.

Coils .38 and 39 are the primaries V,of `a'saturable reactor 40. The saturable reactor `further *includes load coils 41 and '42 which form part of the reactance device When direct-current voltage is applied -to the grid of tube 35, the current balance in the coils V38 and 39 is upset, vand the :resultanteife'ct on the `reactance of load :coils 41and 42 is'suchas to decreasethe reactance'intro- :ducedbyeuice 2'5'toan;extent depending on the direct- 'current level. Conversely, :as the direct-.current level dccreases when the difference frequency approaches the assigned value, the increasing reactance introduced in the filament supply circuit reduces the filament voltage, thereby lowering the filament temperature. The temperature is highest when the frequency difference in the applied voltage from the frequency meter is greatest, and the temperature is progressively lowered as the assigned frequency is approached.

To stabilize the relationship between filament voltage and the input frequency to the temperature control circuit 20, a negative feedback system is provided comprising a transformer 43, a rectifier bridge 44 and a reactance coil 4S incorporated in the saturable reactor 40. The primary of transformer 43 is connected across the filament 12, hence the voltage impressed thereacross is the filament Voltage. The secondary voltage of transformer 43 is rectified and applied to coil 45 in the saturable reactor so as `to vary the operating point in the saturation curve in a manner effecting stabilization.

Referring now to the shut-ofi? control circuit 22, the input wave from terminal 30 is applied to a cathodefollower stage including triode tube 46 whose output is differentiated, rectied and integrated to provide a directcurrent analog to the input voltage. This direct-current voltage is applied as a positive bias to the grid electrode of a thyratron 47 on whose anode is applied an alternating voltage taken from the secondary of a transformer 48. Interposed in the anode circuit is the solenoid of a relay 49 which actuates a normally open switch 50.

Switch 50 is connected in a circuit between a battery 51 and the solenoid 29 of the cut-ofi relay 28. Thus relay 28 is energized to close its switch and apply voltage to the filament supply only when relay 49 is energized to close switch 50. And switch 50 is caused to close only when the direct-current applied to the grid of thyratron 47 has a positive value of sufficient magnitude to override the effect of a negative bias taken from a bias control potentiometer 52. The bias value is adjusted so that when the difference frequency attains the desired value, the resultant positive analog voltage on the grid of the thyratron 47 is insufficient to ignite the tube, as a consequence of which relay 49 is de-energized and cut-off relay 28 is likewise de-energized to break the lament supply circuit. The de-activation of cut-off relay 28 also acts to interrupt the circuit between battery 51 and the shutter solenoid 14, causing the shutter to spring back into its blocking position and thereby preventing any further plating of the crystal in the chamber.

We shall finally consider the structure and behavior of the temperature stabilization control circuit 21. The difference frequency wave from Aterminal 30 is applied to a cathode-follower including triode 53 whose output is differentiated, rectified and integrated to produce a direct-current analog voltage which is impressed as a positive bias on the ignition grid of a thyratron 54. Also applied to the grid is a fixed negative bias derived from a control potentiometer 55. The anode voltage is taken from an alternating voltage supply including transformer 56. interposed in the anode circuit is the solenoid of a relay 57 having a switch provided with a set of upper contacts 57a and a set of lower contacts 57b. The bias voltage applied to the shield grid of thyratron 54 is taken from a potentiometer S8 and is maintained by an R-C cir- Cuit 59. When the thyratron 54 is non-conductive and relay 57 is de-energized, a ground potential is applied to the shield grid circuit through upper relay contacts 57a. When the direct-current analog voltage is sufficient to ignite the thyratron 54, the relay 57 is energized, thereby closing lower contacts 5717 which completes the circuit for the shutter actuating solenoid 14, thereby removing the shutter 13 from the diffusion path in the chamber. At the same time, energization of relay 57 causes upper contacts 57a to open, to remove the ground from the shield grid circuit, and causing a negative bias to be applied thereto depending on the voltage developed across R-C circuit 59. The point at which thyratron 54 re-ignites depends on the magnitude of direct-current analog voltage applied to the grid. Consequently, thyratron 54 is rendered alternately conductive, the ratio of the conductive period to the non-conductive period or duty cycle depending on the magnitude of the analog voltage.

Shutter 13 is therefore caused to remain fully open when the frequency difference between the crystal being plated and the standard crystal is large. But as the shut-off point is approached, the shutter is alternately opened and closed, thereby exposing the crystal surface to the radiant heat of the filament for an ever decreasing period until such time as `the crystal being plated has attained the desired frequency.

While there has been shown what at present is considered to be a preferred embodiment of the invention, it is to be understood that many changes and modifications may be made therein without departing from the essential spirit of the invention. It is intended, therefore, in the accompanying claims to cover all such changes and modifications as fall within 4the true spirit of the invention.

What is claimed is:

l. Apparatus for vacuum plating la crystal element supported in a vacuum chamber so as to adjust its resonance frequency to an assigned value, said apparatus comprising an electrical filament in said chamber for evaporating rnetal onto the surface of said element so as mechanically to load it and thereby reduce its operating frequency, a filament supply circuit to energize said heater to a desired temperature, an oscillator including said element, a frequency standard, a frequency meter coupled to said oscillator and said standard to produce a beat frequency dependent on the difference therebetween, and means responsive to said beat frequency to adjust said filament supply as a function of frequency in a direction gradually reducing said temperature as said beat frequency decreases.

2. Apparatus for vacuum plating a piezoelectric crystal element supported within a vacuum chamber so as to adjust its resonance frequency yto ian assigned value, said apparatus comprising an electrical filament in said chamber for evaporating metal onto the surface of said element so as mechanically to load it and thereby reduce its operating frequency, a filament supply circuit to energize said heater to a desired temperature, an oscillator including said element, a frequency standard, a frequency meter coupled to said oscillator and said standard to produce a beat frequency dependent on the difference therebetween, and means responsive `to said beat frequency to control said filament supply to reduce said temperature as said beat frequency decreases, said last named means including a reactance device interposed in said filament supply and amplier means coupled to said reactance device and responsive to said beat frequency to increase the reactance thereof as said beat frequency is reduced.

3. Apparatus for vacuum plating a crystal element supported in `a vacuum chamber so as to adjust its resonance frequency to an assigned value, said apparatus comprising an electrical filament in said chamber for evaporating metal onto the surface `of said element so as mechanically to load it and thereby reduce its operating frequency, a filament supply circuit to energize said heater to a desired temperature, an oscillator including said element, a frequency standard, a frequency meter coupled to said oscillator and said standard to produce a beat frequency dependent on the :difference therebetween, means responsive to said beat frequency to control said filament supply as a function of frequency to reduce gradually said temperature as said beat frequency decreases, a removable shutter interposable between said filament and said element to block the ow of metal molecules thereto, and means responsive to said beat '7 frequency to operate said shutter intermittently when the beat falls below a predetermined frequency value.

4. Apparatus for vacuum plating a crystal element supported ina vacuum 'chamber so as to adjust its resonance frequency to an assigned Value, said apparatus comprising an electrical lament 'in said chamber for evaporang metal onto the surface of said element so as mechanically to load it and thereby reduce its operating frequency, Va `filament supply circuit to energize said heater rto a desired temperature, an oscillator including said element, `a frequency standard, a lfrequency meter coupled =to said oscillator and said standard to produce a beat frequency dependent on the 'difference therebetween, means responsive to said beat frequency to control said iilament supply as a function 'of frequency to reduce gradually said temperature as said beat frequency decreases, a removable shutter interposable between said filament and said element to block the flow of metal molecules thereto, means responsive to said -beat frequency to operate said shutter -intermittenly when the beat falls below a predetermined value, and means to shut `off lsaid filament supply when said beat `attains an assigned value.

5. Apparatus for vacuum plating a crystal element supported in a vacuum chamber so `as to adjust its resonance frequency to an .assigned value, said apparatus comprising 'an electrical filament in said chamber for evaporating metal onto the surface of said element so as mechanically to load it and thereby reduce its operating frequency, a filament supply circuit to energize said heater to a desired temperature, an oscillator including said element, a frequency standard, a frequency meter coupled to said oscillator and said standard to produce a beat frequency dependent on the difference therebetween, a filament temperature control circuit responsive to said beat frequency to adjust said filament supply as a function 'of frequency to reduce gradually said temperature as said beat frequency decreases, a temperature stabilization control system including a removable shutter interposable between said filament and said element to block the flow ofl metal molecules thereto and means responsive tg s'aid beat frequency to operate said shutter alternately 'when the beat falls below `a predetermined value, and a shut-off control circuit including means to shut oif said filament 'supply when said beat attains an assigned value.

6. Apparatus, as set forth in claim 5, wherein said filament temperature control circuit includes means to produce an analog yvoltage depending on said beat frequency, a reactance device interposed in said filament circuit, Aand an amplifier responsive to said analog vol-tage and coupled to said react'ance device to increase the reactance as the analog voltage is reduc-fed;V

7. Apparatus, as set forth in claim 5, wherein said temperature stabilization control .system includes means to produce an analog voltage depending on said beat frequency, and means responsive to said analog voltage to vary the duty cycle of said alternately operating shutter.

8. Apparatus, as set forth in claim 5, wherein said shut-off 'control circuit includes means to produce an analog voltage `depending on said beat frequency, and means responsive to said analog Voltage to interrupt said nlarnent supply when said voltage falls below a given value.

References Cited in the iile of this .Patent i UNITED STATES PATENTS 

